1. Laser Diodes made from dislocation-free GaAs showing a homogeneous nearfield pattern. 2. Some effects of material inhomogeneities on the nearfield pattern of GaAs diode lasers.
में बचाया:
| मुख्य लेखक: | |
|---|---|
| स्वरूप: | पुस्तक |
| भाषा: | अंग्रेज़ी |
| प्रकाशित: |
Bern
1968
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| टैग: |
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MARC
| LDR | 00000nam a2200000 c 4500 | ||
|---|---|---|---|
| 001 | 821123 | ||
| 007 | tu | ||
| 041 | |a eng | ||
| 100 | 1 | |a Hatz, Joerg | |
| 245 | 1 | 0 | |a 1. Laser Diodes made from dislocation-free GaAs showing a homogeneous nearfield pattern. 2. Some effects of material inhomogeneities on the nearfield pattern of GaAs diode lasers. |
| 246 | 3 | |a HATZ, Joerg: | |
| 264 | 1 | |a Bern |c 1968 | |
| 300 | |a S.233-245;S.643-644;S.656-662 |c 4° | ||
| 500 | |a HATZ, Joerg: -- 1.Laser Diodes made from dislocation-free GaAs -- showing a homogeneous nearfield pattern.2.Some -- effects of material inhomogeneities on the -- nearfield pattern of GaAs diode lasers. - -- Bern 1968.S.233-245;S.643-644;S.656-662.4° -- Aus:Physica status solidi,Bd 28;IEEE Journal -- of quantum electronics,Vol.QE-3,No 11 u.Vol. -- QE-3,No 12. -- Bern,naturwiss.Diss 1968. -- 1972! -- B. | ||
| 852 | |c Dg 8.776 | ||
| 999 | |a Dissertation | ||
| 591 | |a description: 1.Laser Diodes ma.de from dislocationiree GsAssbowing a homogeneous nearfield pattern.2.Saueeffects of material inhomogeneities on thenearfield pattern of GaAs diode la.sers. Bern l968.S.233245 S.643644 S.656662.4Aus:Physica Status solidi,Bd 28 IEEE Journalof quantum electronics,Vol.QE3No 11 u.Vol.QE3,No 12.Bern,naturwiss . |