Offset Gate Field Effect Transistors with high drain breakdown potential and low Miller feedback capacitance.
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| Autor principal: | |
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| Format: | Llibre |
| Idioma: | anglès |
| Publicat: |
Zürich
1967
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MARC
| LEADER | 00000nam a2200000 c 4500 | ||
|---|---|---|---|
| 001 | 196578 | ||
| 007 | tu | ||
| 041 | |a eng | ||
| 100 | 1 | |a Dill, Hans G. | |
| 245 | 1 | 0 | |a Offset Gate Field Effect Transistors with high drain breakdown potential and low Miller feedback capacitance. |
| 246 | 3 | |a DILL,Hans G.: | |
| 264 | 1 | |a Zürich |c 1967 | |
| 300 | |a 94 p., 48 p. fig. and tab. |c 8° | ||
| 500 | |a D 125.827 -- DILL,Hans G.: -- Offset Gate Field Effect Transistors with -- high drain breakdown potential and low Miller -- feedback capacitance. - Zürich 1967.94 p.,48 -- p.fig.and tab.8° -- Zürich,ETH,techn.Diss.1967. -- 1972! -- B. | ||
| 852 | |c D 125.827 | ||
| 999 | |a Dissertation | ||
| 591 | |a description: Offset Üate Field Effect Transistors withh i sh d r a in br e akd o wn Potential and low Millerfeedback capacitance. Zürich 1967.94 p.,48p.fi g.and t ab.8 Zürich,ETH,t e ch n.Di s s.196 7.1972 B. |a signature: D 125.827 |a author: DILL, Hans G. |a published: 1972 | ||