Interface States in metal-oxide-semiconductor-field-effect-transistors.
সংরক্ষণ করুন:
| প্রধান লেখক: | |
|---|---|
| বিন্যাস: | গ্রন্থ |
| ভাষা: | ইংরেজি |
| প্রকাশিত: |
Basel
1970
|
| ট্যাগগুলো: |
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| LDR | 00000nam a2200000 c 4500 | ||
|---|---|---|---|
| 001 | 2572655 | ||
| 007 | tu | ||
| 041 | |a eng | ||
| 100 | 1 | |a Sequin, Carlo | |
| 245 | 1 | 0 | |a Interface States in metal-oxide-semiconductor-field-effect-transistors. |
| 246 | 3 | |a SEQUIN, Carlo: | |
| 264 | 1 | |a Basel |c 1970 | |
| 300 | |a S. 1527-1540 |c 8° | ||
| 500 | |a SEQUIN, Carlo: -- Interface States in metal-oxide-semiconductor- -- field-effect-transistors. - Basel 1970.p.1527- -- 1540.8° -- Aus: Solid-State Electronics, vol.13. -- Basel, naturwiss.Diss.1970. -- 1973! -- B. | ||
| 852 | |c D 129.665 | ||
| 999 | |a Dissertation | ||
| 591 | |a description: Interface States in metaloxidesemiconduetorfieldeffecttransistors. Basel 197o. .1527154o.8Aus:SolidState Electronics,vol.13.Basel,naturwiss.Diss.197o.1973 B. |a signature: D 129.665 |a author: SEQUIN, Carlo |a published: 1973 |