Charge Trapping near the Si/SiO2 interface in semiconductor devices.
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| Format: | Buch |
| Sprache: | Englisch |
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Groningen
1981
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| LEADER | 00000nam a2200000 c 4500 | ||
|---|---|---|---|
| 001 | 848856 | ||
| 007 | tu | ||
| 041 | |a eng | ||
| 100 | 1 | |a HILLEN, Michiel Wouter | |
| 245 | 1 | 0 | |a Charge Trapping near the Si/SiO2 interface in semiconductor devices. |
| 246 | 3 | |a HILLEN,Michiel Wouter: | |
| 264 | 1 | |a Groningen |c 1981 | |
| 300 | |a XVI, 160 S. |b m. Fig. u. Tab. |c 8° | ||
| 500 | |a HILLEN,Michiel Wouter: -- Charge Trapping near the Si/SiO2 interface -- in semiconductor devices. - Groningen 1981. -- XVI,160 S.m.Fig.u.Tab. 8° -- Groningen,naturwiss.Diss. 1981. -- 1982! -- Fie. | ||
| 852 | |c 191.418 | ||
| 999 | |a Dissertation | ||
| 591 | |a description: Charge Trapping near the SiSiOp interfacein semiconductor devices. Groningen 1981.XVI,160 S.m.Fig.u.Tab. 8Groningen,naturwiss.Diss. 1981.1982 Fie. |a signature: 191.418 |a author: KILLEN, Michiel Wouter |a published: 1982 | ||